...
首页> 外文期刊>Electronics Letters >Gate bias system for OTFT electrical characterisation and low-frequency noise measurements
【24h】

Gate bias system for OTFT electrical characterisation and low-frequency noise measurements

机译:栅极偏置系统,用于OTFT电特性表征和低频噪声测量

获取原文
获取原文并翻译 | 示例

摘要

It is shown how some photovoltaic MOSFET drivers can be used for the realisation of a low noise, programmable voltage source, with a dynamic range that can easily exceed several tens of volts starting from standard ± 12 V power supplies. Such a source can be useful in the investigation of the electrical properties, and particularly noise properties, of organic thin film transistors on plastic substrates, since relatively large gate voltage sweeps are required in order to obtain a significant change in the conduction properties of the channel.
机译:该图显示了如何将某些光伏MOSFET驱动器用于实现低噪声,可编程电压源,其动态范围从标准±12 V电源开始就可以轻易超过几十伏。这样的源可用于研究塑料衬底上的有机薄膜晶体管的电性能,尤其是噪声性能,因为需要相对较大的栅极电压扫描才能获得沟道导电性能的显着变化。 。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号