Low-power implantable CMOS bipolar Gaussian monocycle pulse generator

摘要

A novel CMOS bipolar Gaussian monocycle pulse generator consisting of single to differential circuit, narrow pulse generator and Gaussian pulse-shaping circuit is presented. Without traditional LC filtering or multi-channel pulses combination, the proposed generator can be low power and low complexity. Fabricated in a 180 nm standard CMOS process, the test results show that the bipolar Gaussian monocycle pulse can be generated correctly, the power consumption is 1 mW at 200 MHz pulse repeating frequency and the chip core area is only 0.08 mm2under the power supply of 1.8 V, demonstrating the proposed generator with the advantages of low power and low complexity is suitable for implantable IR-UWB transmitter.