10GHz GaAs JFET dual-modulus prescalar IC

摘要

A divide-by-256/258 dual-modulus prescalar IC has been successfully fabricated using enhancement-mode GaAs JFETs. The maximum operation frequency of 10.4 GHz is obtained by a 0.5 mu m gate length and buried p-layer JFET technology. The prescalar IC has sufficient operational margin to make it compatible with Si bipolar ECL circuits over a wide frequency range.