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Technology funding aims to spur development of high-current switches

机译:技术资助旨在刺激大电流开关的发展

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摘要

An advanced technology program (ATP) award from the U.S. Department of Commerce's National Institute of Standards and Technology (NIST) was presented to Velox Semiconductor for development of high-voltage (600- and 1,200-V), high-current (20- and 100-A) electronic switches based on the company's gallium nitride-on-silicon (GaN on-Si) technology. The program funding will advance the company's efforts in developing new enhancement-mode FETs. These new switching devices will offer major benefits to the automotive, computer laptop, consumer, and industrial power supply industries.
机译:Velox半导体公司获得了美国商务部国家标准与技术研究院(NIST)颁发的一项先进技术计划(ATP)奖,用于开发高压(600V和1200V),大电流(20V和20V)的产品。 100-A)电子开关,基于该公司的硅氮化镓(GaN on-Si)技术。该计划的资金将推动该公司开发新型增强型FET的努力。这些新型开关设备将为汽车,笔记本电脑,消费类和工业电源行业带来重大利益。

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