The National LM5113 gallium nitride (GaN) gate driver from Texas Instruments was a breakthrough product because it enables the use of GaN FETs. And like all first-to-market products, the developers had to resolve some difficult challenges. The eight-member design team had to figure out how to maintain the gate drive of the high-side gate drive within the V_(GS) window required for optimal perfor-rnmance of eGaN FETs. Specifically, the eGaN devices have a narrow window of V_(GS) voltage from 4.5 to 5.5 V, and an absolute maximum gate-to-source voltage rating of 6 V, if the designers are to prevent destruction and maintain high efficiency.
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