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Chip-to-Module Interconnections

机译:芯片到模块的互连

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Future integrated circuit (IC) packaging requirements and the performance of chip-to-module interconnections are determined by the expected chip performance. For example, the International Technology Roadmap for Semiconductors~1 specifies that high-performance chips at the 70 nm technology node will cover an area of 427 mm~2, have 4437 input/output (I/O) pins, operate with an on-chip local clock speed of 6 GHz and have a chip-to-board speed of 2.6 GHz. These same chips will dissipate overl71Wof power and draw 190 A of dc current. At the 35 nm technology node, high-performance chips will require interconnections that can support 8758 pins and operate at 16.9 GHz (on-chip) and 3.8 GHz (off-chip). They will dissipate 186 W of heat and consume 310 A dc current.
机译:未来的集成电路(IC)封装要求和芯片至模块互连的性能取决于预期的芯片性能。例如,《国际半导体技术路线图〜1》规定,在70 nm技术节点处的高性能芯片将覆盖427 mm〜2的面积,具有4437个输入/输出(I / O)引脚,并通过芯片本地时钟速度为6 GHz,芯片到板速度为2.6 GHz。这些相同的芯片将耗散超过71W的功率并消耗190 A的直流电流。在35 nm技术节点上,高性能芯片将需要能够支持8758引脚并在16.9 GHz(片上)和3.8 GHz(片外)下运行的互连。它们将耗散186 W的热量并消耗310 A的直流电流。

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