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Manufacturing, test to designers: We need to talk: Big problems looming at 65 nm demand bolder strategies

机译:制造,对设计师的测试:我们需要谈谈:65 nm迫在眉睫的大问题需要大胆的策略

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San Francisco - Chip designers planning to scale their system-on-chip designs to the 65-nanometer process technology node by the middle of the decade were given fair warning at last week's Semicon West show here: Steering past delays in lithography, interconnects and other elements crucial to extending Moore's Law will require some tricky navigation. Designers may need to rely heavily on more expensive phase-shift masks and other enhancement techniques, at least until a somewhat delayed 157-nm lithography solution arrives. Similarly, problems with porous low-dielectric-constant (low-k) materials may force chip designers to add repeaters to global interconnects. At the same time, speakers and panelists said, challenges in bringing on a high-k gate insulator could bedevil designers worried about current leakage and reliability.
机译:旧金山-在上周举行的Semicon West展会上,芯片设计人员计划在本世纪中叶之前将其片上系统设计扩展到65纳米制程技术节点,并得到了合理的警告:应对光刻,互连及其他方面的延迟对于扩展摩尔定律至关重要的元素将需要一些棘手的导航。设计人员可能需要严重依赖更昂贵的相移掩模和其他增强技术,至少要等到稍微延迟的157 nm光刻解决方案到来为止。同样,多孔低介电常数(low-k)材料的问题可能会迫使芯片设计人员向全局互连中添加中继器。演讲者和与会嘉宾说,与此同时,采用高k栅极绝缘体的挑战可能使魔鬼设计师担心电流泄漏和可靠性。

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