Advances In Processes And Device Structures Highlight Digital Sessions

摘要

Every year, the International Electron Devices Meeting (IEDM) reveals an inkling of what will be possible in the next five to ten years. This year's program is no exception. The sessions provide an impressive array of technology developments. In the storage area alone, the focus ranges from new storage cell structures for 4- to 16-Gbit DRAMs to single-electron memories and nanocrystal storage, as well as advanced tunneling structures and other nonvolatile schemes. Presentations in other realms highlight advances in copper-metallization systems, dielectric and gate materials, and still other aspects of device fabrication.