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Don't cut the R&D budget

机译:不要削减研发预算

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摘要

As the industry gears up for the 65-nanometer node over the next few years, researchers are already focusing on the 45-nm node's process technology. Even while the industry grapples with what seems to be an inventory correction, it appears more critical than ever that R&D budgets be spared. Not surprisingly, perhaps, the 45-nm node looks to be chock-full of assorted technical issues, chief among them the integration of a seemingly ever expanding list of new materials. As the industry gets further along in the deep submicron era, capabilities such as porous low-k films, high-k materials, and metal gates may not just be wishful thinking but a necessity if IC performance is going to continue to scale. By comparison, the switch from aluminum to copper interconnects, although fraught with issues and false starts, promises to look like a cakewalk in retrospect.
机译:在接下来的几年中,随着行业为65纳米节点的发展做准备,研究人员已经将重点放在45纳米节点的工艺技术上。即使该行业努力解决似乎是库存校正的问题,但节省研发预算似乎比以往任何时候都更为重要。毫不奇怪,也许45纳米节点看起来充满了各种各样的技术问题,其中最主要的是整合了看似不断扩大的新材料清单。随着行业在深亚微米时代的进一步发展,多孔低k膜,高k材料和金属栅极等功能可能不仅是一厢情愿的考虑,而且还需要IC性能继续扩大规模。相比之下,从铝互连到铜互连的转换尽管充满了问题和错误的启动,但回顾起来似乎还是步履维艰。

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