FORMATION OF NONALLOYED Al OHMIC CONTACTS TO p-TYPE GaAs BY MBE

摘要

Nonalloyed ohmic contacts to p-type GaAs were manufactured by molecular beam epitaxy (MBE) and investigated by the transmission line method (TLM), the secondary ion mass spectroscopy (SIMS) and the transmission electron microscopy (TEM). The technique of the contact formation involved growth of a quasi-metallic GaAs:Be layer with Be concentration equal to (1 / 6)·10~(20)cm~(-3) followed by the low-temperature MBE deposition of Al film on top of it. The average specific contact resistivity of ρ_c = 1·10~(-7) Ω·cm~2 was achieved.