TECRNOLOGY AND PROPERTIES OF GaInAsSb LAYERS GROWN ON GaSb SUBSTRATES

摘要

The Ga_(1-x)In_xAs_ySb_(1-y). layers were grown on GaSb substrates by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, X-ray high resolution diffractometry, electroprobe microanalysis (EPXMA) and numerical analysis of measured C-V characteristic of Schottky barrier junction Hg-GaInAsSb. The different compositions of Ga_(1-x)In_xAs_ySb_(1-y). compounds lattice matched to GaSb substrates with x value changing from 0.021 to 0.23, were established. Applying of sulfidation technique to the substrate's surface before growth, improved layer's quality. n-type layers, with carrier concentration below 3-10~15 cm~-3 have been grown.