MONO/POLY technology for fabricating low-capacitance CMOS integrated circuits

摘要

A process for the fabrication of CMOS transistors with oxide-isolated source-drain regions that are coplanar with the device channel region is described. The process uses the epitaxial lateral overgrowth technique to selectively grow single-crystal silicon from seed regions that will become the transistor channel regions. The source-drain regions are polycrystalline silicon and are deposited following the selective growth. n- and p-channel device characteristics are presented.