Analytical Correction for Effective Mobility Measurements in MOSFETs

摘要

Differences in drain bias used for the capacitance and current measurement steps can lead to inaccuracy in the extraction of mobility at low fields. An analytical correction for a bulk MOSFET can be applied to the capacitance measurement to correct for the effect of drain bias provided doping and oxide capacitance density are known. The proposed correction successfully corrects measured mobility data and is proven by comparison with results obtained from an improved but experimentally more complicated technique.