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首页> 外文期刊>IEEE Transactions on Electron Devices >Development of an S-Band High Average Power Multibeam Klystron With Bandwidth of 10%
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Development of an S-Band High Average Power Multibeam Klystron With Bandwidth of 10%

机译:开发带宽为10%的S波段高平均功率多束速调管

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An S-band high average power multibeam klystron (MBK) producing peak power of 500 kW and average power of 30 kW over 10% of relative simultaneous bandwidth has been designed and developed in Institute of Electronics, Chinese Academy of Sciences (IECAS). The biggest challenges were achieving over 10% relative simultaneous bandwidth performance with higher efficiency at the same time and focusing and transport of the intense electron beam because of the highest level average power in all types of MBKs in IECAS. Two prototypes were manufactured and both have been thoroughly tested. The fundamental mode was chosen for the RF interaction system, 24 beams are used to obtain a beam current of 50 A and the beam voltage is 29 kV. The efficiency is greater than 40% and the gain is greater than 37.5 dB over a relative simultaneous bandwidth of 10%. Both design considerations and experimental results have been addressed in this paper. The experimental results are close to design specifications.
机译:已在中国科学院电子学研究所(IECAS)设计和开发了一种S波段高平均功率多束速调管(MBK),其产生500 kW的峰值功率和30 kW的平均功率超过相对同步带宽的10%。最大的挑战是要同时实现10%以上的相对同时带宽性能和更高的效率,并且由于IECAS中所有类型MBK的平均平均功率最高,因此要聚焦和传输强电子束。制造了两个原型,并且都已经过全面测试。选择了用于射频交互系统的基本模式,使用24束光获得50 A的束电流,束电压为29 kV。在10%的相对同时带宽上,效率大于40%,增益大于37.5 dB。设计方面的考虑和实验结果均已在本文中解决。实验结果接近设计规格。

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