Switching Mechanisms Triggered by a Collector Voltage Ramp in Avalanche Transistors With Short-Connected Base and Emitter

摘要

Although Marx-bank connection of avalanche transistors is widely used in applications requiring high-voltage nanosecond and subnanosecond pulses, the physical mechanisms responsible for the voltage-ramp-initiated switching of a single transistor in the Marx chain remain unclear. It is shown here by detailed comparison of experiments with physical modeling that picosecond switching determined by double avalanche injection in the collector-base diode gives way to formation and shrinkage of the collector field domain typical of avalanche transistors under the second breakdown. The latter regime, characterized by a lower residual voltage, becomes possible despite a short-connected emitter and base, thanks to the 2-D effects.