Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation

摘要

In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring a low damaged sidewall with extremely low leakage current. The fabricated SBD with a drift layer of 1 mu m has achieved a very high ON/OFF current ratio (I-ON/I-OFF) of 10(12) with a low leakage current of similar to 10(-9) A/cm(2) @-10 V, high forward current density of 5.2 kA/cm(2) at 3 V in dc, a low differential specific oN-resistance (R-ON,R-sp) of 0.3 m Omega.cm(2), and ideality factor of 1.04. In addition, a transmission-line-pulse (TLP) l-Vtest was carried out and 53 kA/cm 2 at 30 V in pulsed measurement was obtained without device failure, exhibiting a great potential for high power applications.