Rapid thermal hydrogen passivation of polysilicon MOSFETs

摘要

The effectiveness of rapid thermal annealing as a passivation technique using Si/sub 3/N/sub 4/ as a solid source of H is discussed. Polysilicon MOSFETs with an on/off ratio of 10/sup 7/ can be obtained through rapid thermal hydrogen passivation, compared to an on/off ratio of 10/sup 6/ after furnace passivation. The improvement of subthreshold slope, threshold voltage, and channel transconductance compared to unpassivated MOSFETs is greater for rapid thermal annealing (RTA) than for furnace passivation.