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首页> 外文期刊>Electron Device Letters, IEEE >Field-Emission Characteristics of Molded Molybdenum Nanotip Arrays With Stacked Collimation Gate Electrodes
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Field-Emission Characteristics of Molded Molybdenum Nanotip Arrays With Stacked Collimation Gate Electrodes

机译:具有堆叠准直栅电极的模制钼纳米尖端阵列的场发射特性

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摘要

Double-gate field-emission characteristics of metallic field-emitter-array (FEA) cathodes fabricated by molding with stacked collimation gate electrodes with planar end plane are reported. The collimation of field-emission electron beam with minimal reduction of emission current is demonstrated when a negative bias is applied to the collimation gate, whereas when the two electrodes are at the same potential, the emission characteristic of the double-gate device is the same as that of the single-gate device that shows an emission current of $sim$1 mA from 40 $times$ 40 tip arrays. Results indicate that the device structure of the fabricated double-gate FEAs is promising for high-brilliance cathode applications.
机译:报道了通过堆叠具有平坦端面的准直栅电极模制而成的金属场发射体阵列(FEA)阴极的双栅场发射特性。当在准直栅极上施加负偏压时,证明了场发射电子束的准直具有最小的发射电流,而当两个电极处于相同电势时,双栅极器件的发射特性相同就像单栅极器件一样,它显示40个x 40针尖阵列的发射电流为sim $ 1 mA。结果表明,所制造的双栅极FEA的器件结构有望用于高亮度阴极应用。

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