机译:厚度为9.8nm的AlInN / GaN HEMT的高功率Ka波段性能
AFRL Sensors Directorate, Air Force Res. Lab., Wright-Patterson AFB, OH, USA;
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium compounds; high electron mobility transistors; ohmic contacts; AlInN; AlInN/GaN HEMT; CW Ka-band radiofrequency power measurement; GaN; SiC; frequency 113.8 GHz; frequency 35 GHz; frequency 79 GHz; high-electron mobility transistor; high-power Ka-band performance; metal-organic chemical vapor deposition; ohmic contact; size 9.8 nm; voltage 20 V; Aluminum indium nitride; gallium nitride; high-electron mobility transistor (HEMT); millimeter-wave transistors; power measurement;
机译:AlInN / GaN HEMT的电性能。与具有类似工艺的AlGaN / GaN HEMT的比较
机译:通过背势垒有效抑制AlInN / GaN HEMT的高温DC性能下降
机译:基于第四级背屏对高功率应用的分级alinn / ALN / GAN HEMT器件性能的优化
机译:AlInN / GaN HEMT在微波频率下的功率应用性能
机译:用于大功率应用的AlInN / GaN HEMTS的技术开发和表征
机译:以AlN / GaN超晶格为阻挡层的MOCVD法生长GaN HEMT中的2-DEG特性
机译:alInN / GaN HEmT的电学性能。与具有相似工艺的alGaN / GaN HEmT的比较