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首页> 外文期刊>Electron Device Letters, IEEE >Surface-Potential-Based Analytic DC $I$ –$V$ Model With Effective Electron Density for $a$-IGZO TFTs Considering the Parasitic Resistance
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Surface-Potential-Based Analytic DC $I$ –$V$ Model With Effective Electron Density for $a$-IGZO TFTs Considering the Parasitic Resistance

机译:基于表面电位的分析型直流$ I $ – $ V $模型,考虑了寄生电阻,具有有效的电子密度,适用于$ a $ -IGZO TFT

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摘要

A surface-potential-based analytic direct-current $I$ –$V$ model for amorphous indium–gallium–zinc–oxide thin-film transistors is proposed by adopting an effective electron density $(n_{rm eff})$ model for inclusion of both free carriers and localized charges in the channel. The proposed $n_{rm eff}$ is efficient in reducing the error caused by neglecting the localized electron density $n_{rm loc}$ and allows a closed form of the analytic $I$ –$V$ model. The potential drop across the parasitic resistance $R_{P}$ in the source and drain regions is also fully considered in the model. Finally, we confirmed good agreement of the proposed model with measured $I_{rm DS}$–$V_{rm DS}$ characteristics over a wide range of $V_{rm GS}$ and $V_{rm DS}$.
机译:通过采用有效的电子密度$(n_ {rm eff})$模型,提出了基于表面电势的非晶态铟-镓-锌-氧化物薄膜晶体管的$ I $-$ V $分析模型。在频道中同时包含免费运营商和本地收费。拟议的$ n_ {rm eff} $有效地减少了由于忽略局部电子密度$ n_ {rm loc} $而引起的误差,并且允许解析形式$ I $ – $ V $模型的闭合形式。模型中还充分考虑了源极和漏极区域中寄生电阻$ R_ {P} $上的电位降。最后,我们在$ V_ {rm GS} $和$ V_ {rm DS} $的较大范围内,通过测量的$ I_ {rm DS} $ – $ V_ {rm DS} $特性,确认了所建议模型的良好一致性。

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