Surface-Potential-Based Analytic DC $I$ –$V$ Model With Effective Electron Density for $a$-IGZO TFTs Considering the Parasitic Resistance

摘要

A surface-potential-based analytic direct-current $I$ –$V$ model for amorphous indium–gallium–zinc–oxide thin-film transistors is proposed by adopting an effective electron density $(n_{rm eff})$ model for inclusion of both free carriers and localized charges in the channel. The proposed $n_{rm eff}$ is efficient in reducing the error caused by neglecting the localized electron density $n_{rm loc}$ and allows a closed form of the analytic $I$ –$V$ model. The potential drop across the parasitic resistance $R_{P}$ in the source and drain regions is also fully considered in the model. Finally, we confirmed good agreement of the proposed model with measured $I_{rm DS}$–$V_{rm DS}$ characteristics over a wide range of $V_{rm GS}$ and $V_{rm DS}$.