Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers

摘要

In this letter, the results obtained with a finite termination by argon ion implantation at the periphery of GaN Schottky barrier diodes are reported. It is demonstrated that the implant region width required to obtain the ideal plane parallel breakdown voltage of 1700 V is 50 $muhbox{m}$ .