High-Speed Selector–Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs

摘要

This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped $hbox{n}^{+}$-InP layer inserted at the base–collector junction. Molecular-beam-epitaxy-grown abrupt pulse-doped InP–InGaAs–InP DHBTs ensure very high current gains of $sim$90, low saturation voltages of less than 1 V, and high cutoff frequencies of $sim$ 350 GHz. Using this technology, a compact high-speed high-voltage multiplexer–driver integrated circuit (IC) suitable for high-speed signal processing and communication systems has been designed and fabricated. The IC has successfully been measured at 112 Gb/s with very clear eye openings of up to 2 $V_{rm pp}$ with a power consumption of 2 W.