InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate

摘要

We present the results of a study on epitaxial transfer of InP-based heterostructure barrier varactor (HBV) materials onto a silicon substrate employing the low-temperature plasma-activated bonding technique. The test diodes fabricated on the bonded samples exhibit symmetric electrical characteristics, over the temperature range of 25 $^{circ}hbox{C}$–165 $^{circ}hbox{C}$, and show no degradation compared to previously reported InP-based diodes. Moreover, the onset temperature for debonding, the effective barrier height extracted from the measured data, and the maximum voltage of the HBVs for a current density of 100 $hbox{A/cm}^{2}$ were extracted to be 260 $^{circ}hbox{C}$, 0.56 eV, and 10.5 V, respectively.