Physics-Based Statistical Modeling of PCM Current Drift Including Negative-Drift-Coefficients

摘要

Current drift over time in amorphous $(alpha)$ chalcogenide $(C)$-based phase-change memory (PCM) is investigated through statistical electrical characterization of 45-nm-PCMs integrating $alpha{rm Ge}_{2}{rm Sb}_{2}{rm Te}_{5}$. Then a physically based analytical model that explains drift statistics as a function of observation time is presented. In particular, we address the negative-drift-coefficients (NDC) phenomenon, which we recognize as intrinsic to the $alpha C$ nature.