High Operating Temperature Midwave Infrared InAs/GaSb Superlattice Photodetectors on (111) GaSb Substrates

摘要

We report on the detailed radiometric characterization of midwave infrared (MWIR) (100% cutoff wavelength, i.e., $lambda_{100%}$, was 5.6 $muhbox{m}$ at 295 K) InAs/GaSb type-II strained layer superlattice (T2SL) detectors grown on the GaSb (111) substrate. At 295 K and 4 $muhbox{m}$, a dark current density $J_{d}$ of 0.53 $hbox{A/cm}^{2}$ (at $-$50 mV) and specific detectivity $D^{ast} = hbox{8.5} times hbox{10}^{9}$ Jones (at 0 V) were demonstrated, which are superior values to the state-of-the-art MWIR T2SL detectors with the same (p-i-n) design grown on conventional GaSb (100) substrates.