Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO_2−x Interfacial Layer to Metal/Ge Contact

摘要

We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of on moderately doped n-type Ge substrate was achieved, exhibiting reduction from Ti/Ge structure, and reduction from Ti/undoped TiO/Ge structure. A novel doping technique for TiO interfacial layer at low temperature using Ar plasma was presented to lower contact resistance in Ge n-MOSFET.