>70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning

摘要

We report the state-of-the-art performance of deep-submicrometer gate length dual-gate GaN HEMTs and cascode GaN HEMTs with reduced gate-to-drain feedback capacitance compared with single-gate GaN HEMTs. With 150-nm gate length field-plated gate structures, these GaN HEMTs demonstrated improvement of small-signal gain by 10 dB, compared with single-gate GaN HEMTs. Large-signal load-pull measurements showed peak power-added-efficiency (PAE) of 71%–74% without harmonic tuning at 10 GHz, up to a measured continuous-wave output power level of 2.3–2.5 W. The 74% PAE is very close to a theoretical maximum PAE of 78.5% without harmonic tuning. Compared with single-gate GaN HEMTs, both the dual-gate and cascode GaN HEMTs offer % improvement in peak PAE at the output power of 2.3–2.5 W.