Temperature Tweaking of the Output Photovoltaic Parameters of Laser Power Converters

摘要

An option for the structural design of the metamorphic InGaAs photovoltaic converter is presented. The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125 degrees C temperatures. The temperature dependencies of the output photovoltaic parameters for two types of InxGa1-xAs laser-power converters are presented in regard to In content: with x = 0.23 and x = 0.18 and with an efficiency of similar to 50% and similar to 40% (25 degrees C), respectively. For In0.18Ga0.82As device, an increase in efficiency of up to 50% is recorded upon transition to a temperature range of 50 divided by 60 degrees C with maintaining efficiency at a level of more than 45% at elevated to 100 degrees C operating temperatures. In comparison, the "standard" In0.23Ga0.77As device performs a negative efficiency trend within awhole temperature range with absolute values below 45% in practically important operating modes of +75 o 100 degrees C.