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Soft Error in Saddle Fin Based DRAM

机译:Saddle Fin基DRAM中的软错误

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摘要

Soft error effects due to the alpha particle and terrestrial neutron strike are investigated in a saddle fin DRAM using the 3D TCAD simulation. The strike location and angle dependency are investigated, and the worst-case incidence condition is studied. As the strike time is relevant for the error pattern, the strike during the write period is found to have minor effect, but the strike during the hold period shows data corruption. The inter-active disturbance is effectivelysuppresseddue to the shallowtrenchisolation, but the inter-active ionizing radiation disturbance can be a potential risk as the capacitance of the storage capacitor continues to reduce with the DRAM technology scaling.
机译:使用3D TCAD仿真在马鞍翅片DRAM中研究了由于α粒子和地面中子冲击引起的软错误效应。研究了罢工位置和角度依赖性,研究了最坏情况的发生条件。由于击球时间与错误模式相关,因此发现写期间的罢工具有轻微影响,但保持期间的罢工显示数据损坏。随着DRAM技术缩放的电容继续减少,有效地扰乱了浅晶观的晶体,但是,随着DRAM技术缩放的持续降低,可以是常见的电离辐射扰动,因为由于存储电容器的电容继续降低。

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