首页> 外文期刊>IEEE Electron Device Letters >Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink
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Suppression of Self-Heating Effects in 3-D V-NAND Flash Memory Using a Plugged Pillar-Shaped Heat Sink

机译:使用插入式支柱形散热器抑制3-D V-NAND闪存中的自热效应

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摘要

Self-heating effects (SHEs) in 3-DV-NAND flash memory are investigated using simulations. First, temperature increase is estimated during the read operation, and a hot spot region along the bit-line is identified. Then, a novel bilayered macaroni filler is proposed to relieve the SHEs. A highly thermally conductive layer is plugged into the macaroni oxide filler as a heat sink. The heat dissipation efficiency is improved by up to 21% in the proposed structure. As a result, the reliability issues induced by SHEs can be avoided in V-NAND flash.
机译:使用仿真研究了3-DV-NAND闪存中的自热效应(SHE)。首先,在读取操作期间估计温度升高,并识别沿位线的热点区域。然后,提出了一种新型的双层通心粉填料,以减轻SHE。将高导热层插入通心粉填料中作为散热器。在建议的结构中,散热效率提高了21%。结果,可以避免在V-NAND闪存中由SHE引起的可靠性问题。

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