...
机译:具有外部
School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;
School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China;
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China;
School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;
School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;
School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;
School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;
School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;
School of Electrical Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;
Substrates; Graphene; Logic gates; Radio frequency; Transistors; Strain; Resistance;
机译:具有高外部
机译:H
机译:在450 GHz以上的
机译:从非对称IV特性中提取石墨烯场效应晶体管的本征和非本征参数
机译:具有最新fmax的深亚微米石墨烯场效应晶体管
机译:石墨烯场效应晶体管具有高外形