首页> 外文期刊>Electrical Design News >Fast Future for Flash
【24h】

Fast Future for Flash

机译:Flash的快速未来

获取原文
获取原文并翻译 | 示例
       

摘要

Design and manufacturing improvements are bringing NAND Flash memory to the next level of performance. Process shrinks are providing Flash memory devices with multi-gigabit storage densities as well as faster read access. In addition, architectural innovations are boosting the speeds of erasure and programming as well as read access. These improvements have provided a roadmap that will bring NAND Flash performance to new levels that further increase their utility in modern system designs.
机译:设计和制造方面的改进使NAND闪存达到了更高的性能水平。工艺的缩减为闪存设备提供了数千兆位的存储密度以及更快的读取访问权限。另外,架构创新正在加快擦除和编程以及读取访问的速度。这些改进提供了一个路线图,将NAND闪存的性能提升到新的水平,从而进一步提高了它们在现代系统设计中的效用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号