While working in the 1980s for a major semi- conductor manufacturer, we had a major yield problem that was baffling the production team. Yields were decreasing on a daily basis because of high leakage failures. The usual suspects in this case are positive ions (so-dium) or heavy-metal contamination causing leakage in the oxide layers. Sources for these ionic contaminants can range from a defective dopant bottle to a bag of chips an operator sneaks into the fabrication facility. We applied all the usual approaches to correcting the problem, including changing diffusion sources and cleaning all the glassware, and the yields improved.
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