One-step graphene doping could enable graphene CMOS transistors

摘要

Researchers at the Georgia Institute of Technology have claimed a one-step process that produces both N- and P-type doping of large-area graphene surfaces and that could facilitate the use of the material for future electronic devices. The doping technique, which the researchers produced by applying a commercially available SOG (spin-on-glass) material to graphene and then exposing it to electron-beam radiation, can also increase conductivity in graphene nanoribbons for interconnects.