LOGIC/INTERFACE/MEMORY: HYBRID MEMORY CUBE

摘要

The first 3-D IC to be successfully manufactured in volume with advanced through-silicon vias (TSVs), Micron's Hybrid Memory Cube uses a logic device as its b a s e , with high-performance DRAM vertically stacked above it using TSV connections. Initial volume production of the Hybrid Memory Cube, with its combination of high performance, low power, next-generation features, and competitive cost, heralds 2013 as the turning point for 3-D ICs designed to enable high-performance networks and servers today and destined for markets ranging from industrial to consumer.