首页> 外文期刊>Acta Materialia >ROLE OF THE GRAIN-BOUNDARY PHASE ON THE ELEVATED-TEMPERATURE STRENGTH, TOUGHNESS, FATIGUE AND CREEP RESISTANCE OF SILICON CARBIDE SINTERED WITH Al, B AND C
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ROLE OF THE GRAIN-BOUNDARY PHASE ON THE ELEVATED-TEMPERATURE STRENGTH, TOUGHNESS, FATIGUE AND CREEP RESISTANCE OF SILICON CARBIDE SINTERED WITH Al, B AND C

机译:晶界相在Al,B和C烧结碳化硅的高温强度,韧性,疲劳强度和蠕变抗力中的作用

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摘要

The high-temperature mechanical properties, specifically strength, fracture toughness, cyclic fatigue-crack growth and creep behavior, of an in situ toughened silicon carbide, with Al, B and C sintering additives(ABC-SiC), have been examined at temperature from ambient to 1500 deg. C with the objective of resistance and particularly the fracture toughness displayed by ABC-SiC at ambient temperatures was not severely compromised at elevated temperatures; indeed, the fatigue-crack growth properties up to 1300 deg. C were essentially identical to those at 25 deg. C, whereas resistance to creep deformation was superior to published results on silicon nitride ceramics.
机译:现场测试了Al,B和C烧结助剂(ABC-SiC)的现场增韧碳化硅的高温机械性能,特别是强度,断裂韧性,循环疲劳裂纹扩展和蠕变行为。环境温度至1500度以电阻特别是ABC-SiC在环境温度下表现出的断裂韧性为目标的碳在高温下并未受到严重损害。实际上,疲劳裂纹的生长性能高达1300度。 C基本上与25℃下的C相同。 C,而对蠕变变形的抵抗力则优于已发表的氮化硅陶瓷的结果。

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