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Numerical simulation of secondary electron emission charging at insulator surfaces

机译:绝缘子表面二次电子发射电荷的数值模拟

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The charging process of insulator surfaces in vacuum at HV due to secondary electron emission has been calculated using numerical simulation. The systems considered consist of two electrodes at a HV difference, separated by a glass plate or a hollow glass channel. The simulations give insight into the critical HV positions and into the influence of the geometry, the initial voltage distribution and the material properties on the charging profiles and the leakage current paths. A HV performance increase of these systems can be obtained by decreasing the impact of free electrons, adding a coating on all insulating surfaces which have a high value of E/sub 1/ (i.e. the first crossover point of the secondary electron yield curve) and/or are weakly conductive, and breaking up the total voltage difference in smaller parts by adding electrodes to all surfaces at intermediate voltages.
机译:使用数值模拟计算了由于二次电子发射而导致的真空中真空下绝缘子表面的充电过程。所考虑的系统由两个HV差值的电极组成,由玻璃板或中空玻璃通道隔开。通过仿真可以了解关键的HV位置以及几何形状,初始电压分布和材料特性对充电曲线和泄漏电流路径的影响。通过降低自由电子的影响,在具有高E / sub 1 /(即二次电子产率曲线的第一个交叉点)值的所有绝缘表面上添加涂层,可以提高这些系统的HV性能。 /或导电性较弱,并通过在中间电压下向所有表面添加电极来分解较小部分的总电压差。

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