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Numerical simulation of secondary electron emission charging at insulator surfaces

机译:绝缘子表面二次电子发射电荷的数值模拟

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The charging process of insulator surfaces in vacuum at high voltages due to secondary electron emission has been calculated using the numerical simulation package SELOP. The systems considered consist of two electrodes at a high-voltage difference, separated by a glass plate or a hollow glass channel. The simulations give insight into the critical high-voltage positions and into the influence of the geometry, the initial voltage distribution and the material properties on the charging profiles and the leakage current paths. A high-voltage quality increase of these systems can be obtained by decreasing the number of impacts of free electrons, adding a coating at all insulating surfaces which has a high value of E/sub I/ (i.e. the first crossover point of the secondary electron yield curve) and/or is weakly conductive, and breaking up the total voltage difference in smaller parts by adding electrodes to all surfaces at intermediate voltages.
机译:使用数值模拟包装组织计算了由于二次电子发射引起的高电压真空中的绝缘体表面的充电过程。所考虑的系统由两个电极在高压差,由玻璃板或中空玻璃通道分开。该模拟能够深入了解临界高电压位置以及对充电轮廓上的几何,初始电压分布和材料特性以及漏电流路径的影响。这些系统的高压质量增加可以通过降低自由电子的冲击次数来获得,在所有绝缘表面上添加涂层,该涂层具有高值E / SUB I /(即二次电子的第一交叉点产曲线)和/或弱导电,通过在中间电压下向所有表面添加电极来分解较小部件的总电压差。

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