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Investigation of flashover voltage and non-uniform pollution correction coefficient of short samples of composite insulator intended for u000b1;800kV UHVDC

机译:u000b1; 800kV特高压直流复合绝缘子短样本的闪络电压和非均匀污染校正系数的研究

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Differences in the amount of pollution on the top and bottom surfaces of an insulator have a great influence on the dc pollution flashover voltage. Up to now, many investigations have been carried out on non-uniform pollution flashover performance of porcelain and glass insulators, but very few on composite insulators. In this paper the influence of non-uniform pollution distribution on dc composite insulators on their flashover performance was analyzed, and a correction formula for the non-uniform pollution flashover voltage was proposed, based on artificial pollution tests carried out on short samples of a composite insulator intended for u000b1;800kV UHVDC. The test results showed that, when the ratio (T/B) of the salt deposit density (SDD) on the top surface to that on the bottom surface is between 1/1 and 1/10, the value of the characteristic exponent a indicating the effect of SDD on the flashover voltage ranges from 0.22 to 0.255. The value of a is nearly independent of T/B. However, the flashover voltage U50 decreases with the increase in T/B. The correction formula indicating the influence of non-uniform pollution distribution on the flashover voltage could be expressed as K=1 - bxlog(T/B). For the tested composite insulators, the factor b was 0.141 to 0.156, which is smaller than that of porcelain or glass insulator. That is to say, the influence of T/B on the flashover voltage of the composite insulator is weaker than those on the porcelain and glass insulators.
机译:绝缘子上表面和下表面的污染量差异对直流污染闪络电压有很大影响。迄今为止,已经对瓷绝缘子和玻璃绝缘子的不均匀污染闪络性能进行了许多研究,但对复合绝缘子却很少。本文分析了不均匀污染分布对直流复合绝缘子闪络性能的影响,并基于对复合材料短样品进行的人工污染试验,提出了不均匀污染闪络电压的校正公式。适用于u000b1; 800kV UHVDC的绝缘子。试验结果表明,当顶表面上的盐沉积密度(SDD)与底表面上的盐沉积密度(SDD)之比(T / B)在1/1和1/10之间时,特征指数a的值指示SDD对闪络电压的影响范围为0.22至0.255。 a的值几乎与T / B无关。但是,闪络电压U50随着T / B的增加而降低。表示污染分布不均匀对闪络电压影响的修正公式可以表示为K = 1-bxlog(T / B)。对于测试的复合绝缘子,因数b为0.141至0.156,小于陶瓷或玻璃绝缘子的因数。也就是说,T / B对复合绝缘子的闪络电压的影响比对瓷绝缘子和玻璃绝缘子的影响要弱。

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