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Refinement of residual resistance calculation dedicated to polluted insulator flashover models

机译:改进了专用于污染绝缘子闪络模型的剩余电阻计算

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This paper presents a refinement in the residual resistance formulation used in pollution flashover model. The proposed study focused on the residual resistance calculation of the AR or open model which used the expression of the insulator factor form. The proposed modification takes into account the non-uniformity of the current density distribution inducted by the open model which is increased by the presence of the arc root at the pollution surface. A correction factor was determined based on experimental and numerical investigations. The numerical simulations confirm that the constriction and the distribution of the current lines along the open model have a significant influence on the residual resistance calculation. The proposed corrected residual resistance formulation was then implemented in a dynamic mathematical model in order to determine the critical flashover voltage (FOV) of different cap-and-pin insulators for different pollution layer levels. The results obtained with the proposed flashover model and its corrected resistance formulation show a very good agreement with the theoretical and experimental results obtained from the literature. This validates the propose refinement of the residual resistance dedicated to polluted flashover model and provide a powerful tool for insulator dimensioning.
机译:本文对污染闪络模型中使用的剩余电阻公式进行了改进。拟议的研究集中在使用绝缘子因子形式的表达式的AR或开放模型的残余电阻计算上。所提出的修改考虑了由开放模型引起的电流密度分布的不均匀性,该不均匀性由于污染表面处的弧根的存在而增加。根据实验和数值研究确定了校正因子。数值模拟证实了沿开放模型的电流线的收缩和分布对残余电阻的计算有重大影响。然后,在动态数学模型中实施提出的校正后的剩余电阻公式,以便确定针对不同污染层级别的不同盖销式绝缘子的临界闪络电压(FOV)。所提出的闪络模型及其校正后的电阻公式获得的结果与文献中的理论和实验结果非常吻合。这验证了针对污染闪络模型的剩余电阻的改进方案,并为绝缘子尺寸确定提供了有力的工具。

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