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首页> 外文期刊>IEEE Transactions on Dielectrics and Electrical Insulation >High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun
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High voltage studies of inverted-geometry ceramic insulators for a 350 kV DC polarized electron gun

机译:350 kV DC极化电子枪的反向几何陶瓷绝缘子的高压研究

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Jefferson Lab is constructing a 350 kV direct current high voltage photoemission gun employing a compact inverted-geometry insulator. This photogun will produce polarized electron beams at an injector test facility intended for low energy nuclear physics experiments, and to assist the development of new technology for the Continuous Electron Beam Accelerator Facility. A photogun operating at 350kV bias voltage reduces the complexity of the injector design, by eliminating the need for a graded-beta radio frequency ???capture??? section employed to boost lower voltage beams to relativistic speed. However, reliable photogun operation at 350 kV necessitates solving serious high voltage problems related to breakdown and field emission. This study focuses on developing effective methods to avoid breakdown at the interface between the insulator and the commercial high voltage cable that connects the photogun to the high voltage power supply. Three types of inverted insulators were tested, in combination with two electrode configurations. Our results indicate that tailoring the conductivity of the insulator material, and/or adding a cathode triple-junction screening electrode, effectively serves to increase the hold-off voltage from 300kV to more than 375kV. Electrostatic field maps suggest these configurations serve to produce a more uniform potential gradient across the insulator.
机译:杰斐逊实验室正在建造采用紧凑型倒置几何绝缘体的350 kV直流高压光发射枪。该光枪将在旨在进行低能核物理实验的喷射器测试设施上产生极化电子束,并协助开发连续电子束加速器设施的新技术。在350kV偏置电压下运行的光枪,通过消除对渐变的β射频捕获的需求,降低了喷油器设计的复杂性。用来将较低电压光束提升到相对论速度的部分。但是,可靠的光枪在350 kV下运行需要解决与击穿和场发射相关的严重高压问题。这项研究致力于开发有效的方法,以避免绝缘子和将光枪连接到高压电源的商用高压电缆之间的接口击穿。测试了三种类型的倒置绝缘子,并结合了两种电极配置。我们的结果表明,调整绝缘体材料的电导率和/或添加阴极三结屏蔽电极,可有效地将保持电压从300kV增加到375kV以上。静电场图表明,这些配置可在绝缘子上产生更均匀的电势梯度。

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