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首页> 外文期刊>IEEE Transactions on Dielectrics and Electrical Insulation >Impact of temperature on surface charges accumulation on insulators in SF6-filled DC-GIL
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Impact of temperature on surface charges accumulation on insulators in SF6-filled DC-GIL

机译:温度对填充SF6的DC-GIL中绝缘子表面电荷积累的影响

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摘要

With this expected future advance of HVDC, the use of gas insulated transmission lines (GIL) for dc application are getting increasingly interesting. For now, the problem of surface charge accumulation on gas-insulator interface is one of the critical factors for the development of DC-GIL. In many previous works, the model of surface charge accumulation on insulator was investigated. However, the quantitative relationship between temperature and surface charge accumulation on insulator was not exactly obtained since the lack of complicated heat transfer progress in the model. In this paper, the heat transfer surface charge accumulation model of operating DC-GIL was developed, including the nonlinear relationship between volume current in gas and electric field. Moreover, the space charge was also considered in the model. Based on the developed model, temperature distributions in DC-GIL insulator under different current are obtained. Afterwards, the temperature impact on space charge density in the insulator, the saturation time of surface charge accumulation, the surface charge on the insulator surface, and the electric field distribution on the insulator were investigated. It was proven that the tangential component of the electric field reaches to 5.3 kV/mm on lower interface and 5.0 kV/mm on upper interface for Ti=378 K. This value increase 17.8% on lower interface and 17.6% on upper interface along with the conductor temperature from 298 K to 378 K. The data can be referred in the insulation design of DC-GIL.
机译:随着高压直流输电的这一预期的未来发展,在直流应用中使用气体绝缘传输线(GIL)变得越来越有趣。目前,气体-绝缘体界面上的表面电荷积累问题是发展DC-GIL的关键因素之一。在以前的许多工作中,研究了绝缘子表面电荷积累的模型。但是,由于模型中缺乏复杂的传热过程,因此无法精确获得温度与绝缘子表面电荷积累之间的定量关系。本文建立了工作DC-GIL的传热表面电荷累积模型,包括气体体积电流与电场之间的非线性关系。此外,模型中还考虑了空间电荷。基于所建立的模型,获得了不同电流下DC-GIL绝缘子的温度分布。然后,研究了温度对绝缘子中空间电荷密度的影响,表面电荷积累的饱和时间,绝缘子表面上的表面电荷以及绝缘子上的电场分布。事实证明,Ti = 378 K时,电场的切向分量在下界面处达到5.3 kV / mm,在上界面处达到5.0 kV / mm。该值在下界面处增加17.8%,在上界面处增加17.6%。导体温度从298 K到378K。数据可以参考DC-GIL的绝缘设计。

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  • 作者单位

    Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, Beijing Key Laboratory of High Voltage & EMC, North China Electric Power University, Beinong Road #2, 102206, China;

    Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, Beijing Key Laboratory of High Voltage & EMC, North China Electric Power University, Beinong Road #2, 102206, China;

    Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, Beijing Key Laboratory of High Voltage & EMC, North China Electric Power University, Beinong Road #2, 102206, China;

    Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, Beijing Key Laboratory of High Voltage & EMC, North China Electric Power University, Beinong Road #2, 102206, China;

    Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, Beijing Key Laboratory of High Voltage & EMC, North China Electric Power University, Beinong Road #2, 102206, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Insulators; Electric fields; Conductivity; Temperature distribution; Mathematical model; Heat transfer; Space charge;

    机译:绝缘子;电场;电导率;温度分布;数学模型;传热;空间电荷;

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