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Tailoring Mesoporous Silicon Surface to Form a Versatile Template for Nanoparticle Deposition

机译:剪裁介孔硅表面以形成纳米颗粒沉积的通用模板

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Porous silicon (PS) can be used as a loading template in sensing or as a matrix to develop nanoparticle arrays. We present a comprehensive study of PS morphology and optical properties before and after the pore opening process, including the determination of thickness, pore size, and pore density of PS layers, its surface wettability, and reflectivity. The PS samples were fabricated by electrochemical anodization of monocrystalline silicon wafer in 5–20 wt.% hydrofluoric acid (HF) solution at a current density in the range of 20–200 mA/cm2. Anodization was followed by the pore opening process, i.e., the removal of a parasitic superficial layer with a “bottleneck” structure by reactive ion etching (RIE). The results illustrate that “bottleneck”-free PS allows to achieve a high pore density using a low HF concentration and a reduced current density. We established that this structure demonstrates higher hydrophobicity in comparison to the samples before RIE. The applicability of the developed “bottleneck”-free PS was tested via filling the pores with silver nanoparticles, indicating its potential use as a template for the fabrication of nanoparticle arrays.
机译:多孔硅(PS)可以用作感测的装载模板或作为形成纳米颗粒阵列的基质。我们在孔隙开口过程之前和之后的PS形态和光学性质的综合研究,包括测定厚度,孔径和PS层的孔密度,其表面润湿性和反射率。通过5-20重量%的单晶硅晶片的电化学阳极氧化在5-20重量%的电流密度为20-200mA / cm 2的电流密度的电化学阳极氧化PS样品。阳极氧化之后是孔开口过程,即通过反应离子蚀刻(RIE)用“瓶颈”结构除去寄生浅表层。结果说明“瓶颈”-Free PS允许使用低HF浓度和降低电流密度来实现高孔密度。我们确定该结构与RIE之前的样品相比,疏水性更高。通过用银纳米颗粒填充孔来测试发育的“瓶颈”-Free PS的适用性,表明其潜在用作制备纳米粒子阵列的模板。

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