On the ionization loss spectra of high-energy channeled negatively charged particles

摘要

The ionization loss spectra of high-energy negatively charged particles which move in the planar channeling mode in a silicon crystal are studied with the use of numerical simulation. The case when the crystal thickness is on the order of the dechanneling length $$l_d$$ ld is considered. It is shown that in this case the shape of the spectrum noticeably depends on $$l_d$$ ld. The evolution of various characteristic parameters of the spectrum with the change of $$l_d$$ ld is investigated. A method of the experimental determination of $$l_d$$ ld on the basis of the measurement of the ionization loss spectrum is proposed.