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Low-power high-performance 32-bit RISC-V microcontroller on 65-nm silicon-on-thin-BOX (SOTB)

机译:低功耗高性能32位RISC-V微控制器上65-NM硅式薄盒(SOTB)

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In this paper, a 32-bit RISC-V microcontroller in a 65-nm Silicon-On-Thin-BOX (SOTB) chip is presented. The system is developed based on the VexRiscv Central Processing Unit (CPU) with the Instruction Set Architecture (ISA) extensions of RV32IM. Besides the core processor, the System-on-Chip (SoC) contains 8KB of boot ROM, 64KB of on-chip memory, UART controller, SPI controller, timer, and GPIOs for LEDs and switches. The 8KB of boot ROM has 7KB of hard-code in combinational logics and 1KB of a stack in SRAM. The proposed SoC performs the Dhrystone and Coremark benchmarks with the results of 1.27 DMIPS/MHz and 2.4 Coremark/MHz, respectively. The layout occupies 1.32-mm 2 of die area, which equivalents to 349,061 of NAND2 gate-counts. The 65-nm SOTB process is chosen not only because of its low-power feature but also because of the back-gate biasing technique that allows us to control the microcontroller to favor the low-power or the high-performance operations. The measurement results show that the highest operating frequency of 156-MHz is achieved at 1.2-V supply voltage (V DD ) with +1.6-V back-gate bias voltage (V BB ). The best power density of 33.4-μW/MHz is reached at 0.5-V V DD with +0.8-V V BB . The least current leakage of 3-nA is retrieved at 0.5-V V DD with -2.0-V V BB .
机译:在本文中,提出了65纳米硅芯片(SOTB)芯片中的32位RISC-V微控制器。该系统是基于VEXRISCV中央处理单元(CPU)开发的,其中RV32IM的指令集架构(ISA)扩展。除核心处理器外,片上系统(SOC)还包含8KB的引​​导ROM,64KB的片上存储器,UART控制器,SPI控制器,定时器和LED和交换机的GPIO。 8KB的Boot ROM在SRAM中拥有7KB的组合逻辑中的硬代码和1KB堆栈。该建议的SOC分别执行DHRYSTONE和COREMARK基准,结果分别为1.27 DMIPS / MHz和2.4 CoreMark / MHz。布局占用1.32毫米2的模具区域,该等同于NAND2栅极计数的349,061。不仅选择了65nm Sotb过程,不仅是因为它的低功率特征,而且因为允许我们控制微控制器以支持低功耗或高性能操作的后栅偏置技术。测量结果表明,使用+ 1.6V后栅偏置电压(V BB)的1.2-V电源电压(V DD)实现了156-MHz的最高工作频率。以0.5V V DD为0.5V V DD的最佳功率密度为+ 0.8V VBB。用-2.0-V V Bb的0.5V V DD检索3-NA的最小电流泄漏。

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