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Identification of fragment ions produced by the decomposition of tetramethyltin and the production of low-energy Sn + ion beam

机译:通过分解四甲基锡产生的片段离子和低能量Sn +离子束产生的片段离子

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Tetramethyltin was decomposed in an ion source and the fragment ions produced were identified using a low-energy mass-selected ion beam machine. Dominant fragment ions were found to be H + , CH 2 + , and Sn + . Subsequently, fragment ions were mass-selected. The mass spectrum of the selected ions indicated that only a single peak appeared at the mass number of 120 u, being suggestive of the presence of 120 Sn + ions. The ion energy was set at the range of 20–100 eV. The Sn + ion beam was irradiated to a Si substrate, and a film was then found deposited on the substrate after the ion beam irradiation. An X-ray diffraction measurement showed that the film obtained was metallic Sn. Then, the Sn + ion beam was irradiated to a quartz crystal microbalance substrate. We found that most of the irradiated Sn + ions were adhered to the substrate, at the ion energy levels of 25 and 58 eV, producing the Sn film, whereas a 107 eV Sn + beam caused a significant proportion of Sn atoms in the film to detach from the substrate, probably due to sputtering.
机译:四甲基锡在离子源中分解,并使用低能量质量选择离子束机鉴定产生的片段离子。发现显性片段离子是H +,CH 2 +和Sn +。随后,碎片离子被质量选择。所选离子的质谱表明,仅在120 u的质量数为120 u的单个峰值,暗示了120sn +离子的存在。离子能量设定在20-100eV的范围内。将Sn +离子束照射到Si衬底,然后在离子束照射后发现薄膜在基板上沉积。 X射线衍射测量表明,得到的薄膜是金属Sn。然后,将Sn +离子束照射到石英晶体微稳态基板上。我们发现,大多数辐照的Sn +离子粘附到基板上,在25和58eV的离子能级,产生Sn膜,而107eV Sn +光束在膜中引起大量比例的Sn原子从基板上脱离,可能是由于溅射。

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