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The Bianisotropic Formulation of the Plane Wave Method from Faraday’s and Ampere’s Laws

机译:法拉第和安培法律的平面波法的双程度分布

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The plane wave numerical technique is recast from Ampere’s and Faraday’s laws for materials that are characterized with a bianisotropic form of the constitutive relations. The populating expressions are provided for the eigenvalue matrix system that can be directly solved for the angular frequencies and field profiles when bianisotropy is included. To demonstrate the computation process and expected state diagrams and field profiles, numerical computation examples are provided for a bianisotropic Bragg Array with central defect. It is shown that the location of the magnetoelectric tensor elements has a significant effect on the eigenstates of an equivalent isotropic (anisotropic) structure. One form of the magnetoelectric tensor (diagonal elements only) leads to the observation of merging states and the formation of exceptional points. The numerical approach presented can be implemented as an add-on to the familiar plane wave numerical technique.
机译:从安培和法拉第法律的材料重新循环平面波的数值技术,这些材料的特征在于构成关系的双级别形式。 为特征值矩阵系统提供了填充表达式,该系统可以直接求解在包括BianIsotropy时的角度频率和场廓线。 为了说明计算过程和预期状态图和字段配置文件,为具有中央缺陷的双行辐射布拉格阵列提供了数值计算示例。 结果表明,磁电张量元件的位置对等同各向同性(各向异性)结构的特征酯具有显着影响。 磁电张量(仅对角线元件)的一种形式导致对合并状态的观察和特殊点的形成。 呈现的数值方法可以实现为熟悉的平面波数技术的加载项。

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