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首页> 外文期刊>The journal of high energy physics >The critical transition of Coulomb impurities in gapped graphene
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The critical transition of Coulomb impurities in gapped graphene

机译:Coulomb杂质在螺纹石墨烯中的关键转变

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摘要

The effect of supercritical charge impurities in graphene is very similar to the supercritical atomic collapses in QED for Z > 137, but with a much lower critical charge. In this sense graphene can be considered as a natural testing ground for the analysis of quantum field theory vacuum instabilities. We analyze the quantum transition from subcritical to supercritical charge regimes in gapped graphene in a common framework that preserves unitarity for any value of charge impurities. In the supercritical regime it is possible to introduce boundary conditions which control the singular behavior at the impurity. We show that for subcritical charges there are also non-trivial boundary conditions which are similar to those that appear in QED for nuclei in the intermediate regime 118 < Z < 137. We analyze the behavior of the energy levels associated to the different boundary conditions. In particular, we point out the existence of new bound states in the subcritical regime which include a negative energy bound state in the attractive Coulomb regime. A remarkable property is the continuity of the energy spectral flow under variation of the impurity charge even when jumping across the critical charge transition. We also remark that the energy levels of hydrogenoid bound states at critical values of charge impurities act as focal points of the spectral flow.
机译:石墨烯中超临界电荷杂质的效果与Z> 137的QED中的超临界原子塌陷非常相似,但是临界电荷得多。在这种情况下,石墨烯可以被认为是用于分析量子场理论真空稳定性的自然测试接地。我们在普通框架中分析从覆盖石墨烯中的超临界电荷调节的量子转变,该常见框架在占据任何电荷杂质的任何值的常见框架中。在超临界方案中,可以引入控制杂质处的奇异行为的边界条件。我们表明,对于亚临界电荷,还存在与中间条件118

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