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Electrical treeing and partial discharge characteristics of silicone rubber filled with nitride and oxide based nanofillers

机译:用氮化物和氧化物基纳米填充硅橡胶的电气树和局部放电特性

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This article presents a study on electrical treeing performances with its associated partial discharge (PD) and the influence of filler concentration in silicone rubber (SiR) samples which are filled with silicon dioxide (SiO2) and silicon nitride (Si3N4) as nanofillers for electrical tree growth suppression. There are many researches on electrical treeing in SiR with SiO2 nanofillers but none of the publication have reported on Si3N4 nanofillers for suppression of the electrical tree growth. In this study, the treeing experiments were conducted by applying a fixed AC voltage of 10 kV and 12 kV at power frequency of 50 Hz on unfilled SiR, SiR/SiO2, and SiR/Si3N4 nanocomposites with different filler concentrations by 1, 3, and 5 weight percentage (wt%) and the electrical treeing parameters were observed with its correlated PD patterns. The outcome from this study found that the SiR/Si3N4 nanocomposites were able to withstand the electrical treeing better than the pure SiR or SiR/SiO2 nanocomposites. Furthermore, the increase in filler concentration improved the electrical tree performances of the nanocomposites. This finding suggests the Si3N4 can be used as filler in polymeric insulating materials for electrical tree inhibition. Meanwhile, the PD activity shows increment when the tree progresses thereby indicating correlation in both parameters which can be as key parameter for monitoring unseen electrical treeing in the opaque samples.
机译:本文介绍了上电树性能与其相关联的局部放电(PD)和填充有二氧化硅(SiO 2)和氮化硅(Si3N4)的硅橡胶(SIR)样品填料浓度的影响的研究作为纳米填料为电树生长抑制。还有在爵士电树与二氧化硅纳米填料许多研究,但没有发表的报告对Si3N4纳米填料的电树枝生长的抑制。在这项研究中,树结构化实验通过施加10千伏及由1在50Hz上未填充的SIR,SIR /二氧化硅,和SiR /氮化硅与不同填料浓度的纳米复合材料的功率频率为12kV,3的固定的交流电压进行的,并且5重量百分比(重量%)和电树参数与其相关PD模式进行观察。从这项研究结果发现,先生/氮化硅纳米复合材料能够承受的电树优于纯先生或先生/ SiO2纳米复合材料。此外,在填料浓度的增加提高了纳米复合材料的电树性能。这一发现表明该氮化硅可被用作在用于电树抑制聚合绝缘材料填料。同时,PD活性显示递增当树进展由此指示在这两个参数可以是作为用于不透明的样品中监测看不见电树关键参数的相关性。

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