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Electronic structure and core electron fingerprints of caesium-based multi-alkali antimonides for ultra-bright electron sources

机译:用于超亮电子源的基于铯的多碱锑糖苷的电子结构和核心电子指纹

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The development of novel photocathode materials for ultra-bright electron sources demands efficient and cost-effective strategies that provide insight and understanding of the intrinsic material properties given the constraints of growth and operational conditions. To address this question, we propose a viable way to establish correlations between calculated and measured data on core electronic states of Cs-K-Sb materials. To do so, we combine first-principles calculations based on all-electron density-functional theory on the three alkali antimonides Cssub3/subSb, Cssub2/subKSb, and CsKsub2/subSb with x-ray photoemission spectroscopy (XPS) on Cs-K-Sb photocathode samples. Within the GW approximation of many-body perturbation theory, we obtain quantitative predictions of the band gaps of these materials, which range from 0.57?eV in Cssub2/subKSb to 1.62?eV in CsKsub2/subSb and manifest direct or indirect character depending on the relative potassium content. Our theoretical electronic-structure analysis also reveals that the core states of these systems have binding energies that depend only on the atomic species and their crystallographic sites, with largest shifts of the order of 2?eV and 0.5?eV associated to K 2p and Sb 3d states, respectively. This information can be correlated to the maxima in the XPS survey spectra, where such peaks are clearly visible. In this way, core-level shifts can be used as fingerprints to identify specific compositions of Cs-K-Sb materials and their relation with the measured values of quantum efficiency. Our results represent the first step towards establishing a robust connection between the experimental preparation and characterization of photocathodes, the ab initio prediction of their electronic structure, and the modeling of emission and beam formation processes.
机译:用于超亮电子源的新型光电阴极材料的开发需要提供有效且具有成本效益的策略,其为鉴于生长和运营条件的约束,对内在材料特性提供了洞察力和理解。为了解决这个问题,我们提出了一种可行的方法,可以在CS-K-SB材料的核心电子状态下计算和测量数据之间的相关性。为此,我们将基于全电子密度功能理论的第一原理计算结合在三种碱锑CS 3 Sb,Cs 2 KSB和CSK CS-K-SB光电阴极样品上的X射线照相激光谱(XPS)的2 Sb。在许多身体扰动理论的GW近似值中,我们获得了这些材料的带隙的定量预测,其范围为0.57?EV中的CS 2 ksb至1.62中的eV在CSK 2中 Sb和明显的直接或间接性质,取决于相对钾含量。我们的理论电子结构分析还揭示了这些系统的核心状态具有粘合能量,其仅取决于原子物种及其晶体基位,最大偏移为2°EEx的顺序和0.5?EV与K 2P和SB相关联3D状态分别。该信息可以与XPS测量光谱中的最大值相关联,其中这种峰清晰可见。以这种方式,核心级移可用作指纹,以识别CS-K-SB材料的特定组合物及其与量子效率的测量值的关系。我们的结果代表了在光电阴极的实验制备和表征之间建立了稳健连接的第一步,其电子结构的AB初始预测和发射和梁形成过程的建模。

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